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QS6K21FRA

Rohm
Part Number QS6K21FRA
Manufacturer Rohm
Description Nch 45V 1A Power MOSFET
Published Oct 6, 2016
Detailed Description QS6K21FRA Nch 45V 1A Power MOSFET VDSS RDS(on) (Max.) ID PD 45V 420mW 1A 1.25W lFeatures 1) Low on - resistance. 2) ...
Datasheet PDF File QS6K21FRA PDF File

QS6K21FRA
QS6K21FRA

Overview
QS6K21FRA Nch 45V 1A Power MOSFET VDSS RDS(on) (Max.
) ID PD 45V 420mW 1A 1.
25W lFeatures 1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant lOutline TSMT6 Datasheet AEC-Q101 Qualified (6) (5) (4) (1) (2) (3) lInner circuit (1) Tr1 Gate (2) Tr2 Source (3) Tr2 Gate (4) Tr2 Drain (5) Tr1 Source (6) Tr1 Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging lApplication DC/DC converters Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg 45 1.
0 2.
0 12 1.
25 0.
9 0.
6 150 -55 to +150 Taping 180 8 3,000 TR K21 Unit V A A V W / total W / element W / total °C °C www.
rohm.
com © 2012 ROHM Co.
, Ltd.
All rights reserved.
1/11 2012.
10 - Rev.
B QS6K21FRA lThermal resistance Parameter Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min.
Typ.
Max.
Unit - - 100 °C/W - - 208 °C/W lElectrical characteristics(Ta = 25°C) ,unless otherwise specified Parameter Symbol Conditions Min.
Values Typ.
Max.
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 45 - - Unit V Breakdown voltage temperature coefficient ΔV(BR)DSS ID=1mA ΔTj referenced to 25°C - Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS IGSS VGS (th) VDS = 45V, VGS = 0V VGS = 12V, VDS = 0V VDS = 10V, ID = 1mA 0.
5 Gate threshold voltage temperature coefficient ΔV(GS)th ID=1mA ΔTj referenced to 25°C - Static drain - source on - state resistance Gate input resistannce Transconductance VGS=4.
5V, ID=...


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