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UT54ACS00E

Aeroflex Circuit Technology
Part Number UT54ACS00E
Manufacturer Aeroflex Circuit Technology
Description Quadruple 2-Input NAND Gates
Published Oct 6, 2016
Detailed Description UT54ACS00E Quadruple 2-Input NAND Gates April 2015 www.aeroflex.com/Logic Datasheet FEATURES • 0.6μm CRH CMOS process -...
Datasheet PDF File UT54ACS00E PDF File

UT54ACS00E
UT54ACS00E

Overview
UT54ACS00E Quadruple 2-Input NAND Gates April 2015 www.
aeroflex.
com/Logic Datasheet FEATURES • 0.
6μm CRH CMOS process - Latchup immune • High speed • Low power consumption • Wide power supply operating range from 3.
0V to 5.
5V • Available QML Q or V processes • 14-lead flatpack • UT54ACS00E - SMD 5962-96512 DESCRIPTION The UT54ACS00E is a performance and voltage enhanced version of the UT54ACS00 quadruple, two-input NAND gate.
The circuit performs the Boolean functions Y = A⋅B or Y = A + B in positive logic.
The device is characterized over full military temperature range of -55°C to +125°C.
FUNCTION TABLE INPUTS AB HH LX XL OUTPUT Y L H H PINOUT A1 B1 Y1 A2 B2 Y2 VSS 14-Lead Flatpack TopView 1 14 2 13 3 12 4 11 5 10 69 78 VDD B4 A4 Y4 B3 A3 Y3 LOGIC SYMBOL (1) A1 (2) B1 (4) A2 (5) B2 (9) A3 (10) B3 (12) A4 (13) B4 & (3) Y1 (6) Y2 (8) Y3 (11) Y4 Note: 1.
Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC Publication 617-12.
LOGIC DIAGRAM A1 B1 A2 B2 A3 B3 A4 B4 Y1 Y2 Y3 Y4 36-00-04-005 Ver.
1.
0.
0 1 Aeroflex Microelectronics Solutions - HiRel OPERATIONAL ENVIRONMENT 1 PARAMETER Total Dose SEU Threshold 2 SEL Threshold Neutron Fluence LIMIT 1.
0E6 108 120 1.
0E14 Notes: 1.
Logic will not latchup during radiation exposure within the limits defined in the table.
2.
Device storage elements are immune to SEU affects.
UNITS rads(Si) MeV-cm2/mg MeV-cm2/mg n/cm2 ABSOLUTE MAXIMUM RATINGS1 SYMBOL PARAMETER LIMIT UNITS VDD VI/O TSTG TJ TLS ΘJC II PD2 Supply voltage Voltage any pin Storage Temperature range Maximum junction temperature Lead temperature (soldering 5 seconds) Thermal resistance junction to case DC input current Maximum package power dissipation permitted @ TC = +125oC -0.
3 to 7.
0 -0.
3 to VDD +0.
3 -65 to +150 +175 +300 15 ±10 3.
2 V V °C °C °C °C/W mA W Note: 1.
Stresses outside the listed absolute maximum ratings may cause permanent damage to the device.
This is a stress rating only, functional operation of the device at t...


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