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AM12N50P

Analog Power
Part Number AM12N50P
Manufacturer Analog Power
Description N-Channel MOSFET
Published Oct 6, 2016
Detailed Description Analog Power N-Channel 500-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Datasheet PDF File AM12N50P PDF File

AM12N50P
AM12N50P

Overview
Analog Power N-Channel 500-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting AM12N50P PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 500 520 @ VGS = 10V ID (A) 12a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TC=25°C VGS ID IDM IS ±20 12 50 12 Power Dissipation TC=25°C PD 150 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.
5 1 Units °C/W Notes a.
Calculated continuous current based on maximum allowable junction temperature.
b.
Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM12N50P_1A Analog Power AM12N50P Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 400 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 6 A VDS = 15 V, ID = 6 A IS = 6 A, VGS = 0 V Dynamic b 1 20 V ±100 nA 1 uA 25 A 520 mΩ 38 S 0.
9 V Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 250 V, VGS = 10 V, ID = 6 A VDS = 250 V, RL = 50 Ω, ID = 6 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, V...


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