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AM90N10-08M5PCFM

Analog Power
Part Number AM90N10-08M5PCFM
Manufacturer Analog Power
Description N-Channel MOSFET
Published Oct 6, 2016
Detailed Description Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Datasheet PDF File AM90N10-08M5PCFM PDF File

AM90N10-08M5PCFM
AM90N10-08M5PCFM



Overview
Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • LED Inverter Circuits • DC/DC Conversion Circuits • Motor drives AM90N10-08m5PCFM PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 100 8.
5 @ VGS = 10V ID (A) 69a ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C TC=25°C VGS ID IDM IS PD ±20 69 280 69 60 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.
5 2.
5 Units °C/W Notes a.
Package Limited b.
Pulse width limited by maximum junction temperature c.
Surface Mounted on 1” x 1” FR4 Board.
© Preliminary 1 Publication Order Number: DS_AM90N10-08m5PCFM_1A Analog Power AM90N10-08m5PCFM Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VDS = 15 V, ID = 20 A IS = 35 A, VGS = 0 V Dynamic b VDS = 50 V, VGS = 5.
5 V, ID = 20 A VDS = 50 V, RL = 2.
5 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 Mhz Min Typ Max Unit 1V ±100 nA 1 uA 10 100 A 8.
5 mΩ 22 S 0.
83 V 114 ...



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