DatasheetsPDF.com

AM90N06-15PCFM

Analog Power
Part Number AM90N06-15PCFM
Manufacturer Analog Power
Description N-Channel MOSFET
Published Oct 6, 2016
Detailed Description Analog Power N-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast sw...
Datasheet PDF File AM90N06-15PCFM PDF File

AM90N06-15PCFM
AM90N06-15PCFM

Overview
Analog Power N-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools AM90N06-15PCFM VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 12 @ VGS = 10V 15 @ VGS = 4.
5V ID (A) 58 52 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C TC=25°C VGS ID IDM IS PD ±20 58 200 58 60 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.
5 2.
5 Units °C/W Notes a.
Package Limited b.
Pulse width limited by maximum junction temperature c.
Surface Mounted on 1” x 1” FR4 Board.
© Preliminary 1 Publication Order Number: DS_AM90N06-15PCFM_1A Analog Power AM90N06-15PCFM Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 48 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.
5 V, ID = 18 A VDS = 15 V, ID = 20 A IS = 29 A, VGS = 0 V Dynamic b VDS = 30 V, VGS = 4.
5 V, ID = 20 A VDS = 30 V, RL = 2 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 Mhz Min Typ Max Unit 1V ±100 nA...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)