DatasheetsPDF.com

AM90N03-06B

Analog Power
Part Number AM90N03-06B
Manufacturer Analog Power
Description N-Channel MOSFET
Published Oct 7, 2016
Detailed Description Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM90N03-06B PDF File

AM90N03-06B
AM90N03-06B

Overview
Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management such as computers, printers, and power supplies.
• Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe TO-263 saves board space • Fast switching speed • High performance trench technology AM90N03-06B PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 6 @ VGS = 10V 7.
2 @ VGS = 4.
5V ID (A) 90a D1 G1 S1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TC=25oC ID IDM IS TC=25oC PD TJ, Tstg 30 ±20 90 240 90 300 -55 to 175 V A A W oC THERMALRESISTANCERATINGS Parameter Symbol MaximumJunction-to-Ambienta RθJA MaximumJunction-to-Case RθJC Notes a.
Package Limited b.
Pulse width limited by maximum junction temperature Maximum Units 62.
5 oC/W 0.
5 oC/W PRELIMINARY 1 Publication Order Number: DS-AM90N04-03_A Analog Power AM90N03-06B SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time VG S(t h ) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55oC VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 1 A VGS = 4.
5 V, ID = 1 A VDS = 15 V, ID = 1 A IS = 1 A, VGS = 0 V Qg Qgs Qgd td (o n ) t...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)