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AM10N30-600I

Analog Power
Part Number AM10N30-600I
Manufacturer Analog Power
Description N-Channel MOSFET
Published Oct 7, 2016
Detailed Description Analog Power N-Channel 300-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proce...
Datasheet PDF File AM10N30-600I PDF File

AM10N30-600I
AM10N30-600I

Overview
Analog Power N-Channel 300-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe DPAK saves board space • Fast switching speed • High performance trench technology AM10N30-600I PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 300 600 @ VGS = 10V 900 @ VGS = 5.
5V ID (A) 7.
5 6.
1 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TC=25oC ID IDM IS TC=25oC PD TJ, Tstg 300 ±20 7.
5 36 5 50 -55 to 175 V A A W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.
0 Units oC/W oC/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM10N30-600_A Analog Power AM10N30-600I SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time VGS(th) IGSS IDSS ID(on) rD S(o n ) gfs VSD VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V VDS = 240 V, VGS = 0 V VDS = 240 V, VGS = 0 V, TJ = 55oC VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 1 A VGS = 5.
5...


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