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AM20P06-135D

Analog Power
Part Number AM20P06-135D
Manufacturer Analog Power
Description P-Channel MOSFET
Published Oct 7, 2016
Detailed Description Analog Power P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM20P06-135D PDF File

AM20P06-135D
AM20P06-135D

Overview
Analog Power P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe DPAK saves board space • Fast switching speed • High performance trench technology AM20P06-135D PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) -60 135 @VGS= -10V 190 @VGS= -4.
5V ID (A) 16 14 ABSOLUTEMAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC ID IDM -60 ±20 V 16 A ±40 Continuous Source Current (Diode Conduction)a IS -15 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC PD 50 TJ, Tstg -55 to 175 W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.
0 Units oC/W oC/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM20P06-135_A Analog Power AM20P06-135D SPECIFICATIONS (TA =25oCUNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS =VGS, ID =-250uA VDS = 0 V, VGS = ±20 V VDS =-48V, VGS =0V VDS = -48 V, VGS = 0 V, TJ = 55oC VDS =-5V, VGS =-10V VGS =-10V, ID =-28A VGS =-4.
5V, ID =-14A V...


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