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AM160N03-03D

Analog Power
Part Number AM160N03-03D
Manufacturer Analog Power
Description N-Channel MOSFET
Published Oct 8, 2016
Detailed Description Analog Power N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast sw...
Datasheet PDF File AM160N03-03D PDF File

AM160N03-03D
AM160N03-03D


Overview
Analog Power N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools AM160N03-03D PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 30 3.
9 @ VGS = 10V ID (A) 93 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C VGS ID IDM IS PD ±20 93 350 93 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 3 Units °C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM160N03-03D_1A Analog Power AM160N03-03D Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VDS = 15 V, ID = 20 A IS = 45 A, VGS = 0 V Dynamic b VDS = 15 V, VGS = 4.
5 V, ID = 20 A VDS = 15 V, RL = 0.
8 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 Mhz Min Typ Max Unit 1V ±100 nA 1 uA 10 130 A 3.
9 mΩ 11 S 0.
75 V 36 12 13 12 15 89 30 6725 466 397 nC n...



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