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AM6544C

Analog Power
Part Number AM6544C
Manufacturer Analog Power
Description P & N-Channel MOSFET
Published Oct 8, 2016
Detailed Description Analog Power AM6544C P & N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density...
Datasheet PDF File AM6544C PDF File

AM6544C
AM6544C

Overview
Analog Power AM6544C P & N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 32 @ VGS = 10V 46 @ VGS = 4.
5V -30 52 @ VGS = -10V 80 @ VGS = -4.
5V ID (A) 4.
3 3.
7 -3.
8 -2.
8 • Low rDS(on) provides higher efficiency and extends battery life TSSOP-8 Top View D1 S2 • Low thermal impedance copper leadframe D1 1 TSSOP-8 saves board space S1 2 S1 3 • Fast switching speed G1 4 • High performance trench technology 8 D2 7 S2 G1 G2 6 S2 5 G2 S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 30 -30 ±20 ±20 4.
3 -3.
8 3.
5 -3.
0 20 -20 Continuous Source Current (Diode Conduction)a IS 1.
0 -1.
0 Power Dissipationa TA=25oC TA=70oC PD 1.
14 1.
14 0.
73 0.
73 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 -55 to 150 Units V A A W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RthJA Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature Typ 88 120 Max 110 150 oC/W PRELIMINARY 1 Publication Order Number: DS-AM6544_A Analog Power AM6544C SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Limits Ch Min Typ Static Gate-Threshold Voltage Gate-Body Leakage VGS(th) IGSS VGS = VDS, ID = 250 uA VGS = VDS, ID = -250 uA VGS VGS = = 20 -20 VV,,VVDDSS==00VV N 1.
0 P -1.
0 N P Zero Gate Voltage Drain Current On-State Drain CurrentA D...


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