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AM2321PE

Analog Power
Part Number AM2321PE
Manufacturer Analog Power
Description P-Channel MOSFET
Published Oct 8, 2016
Detailed Description Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM2321PE PDF File

AM2321PE
AM2321PE

Overview
Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOT-23 saves board space • Fast switching speed • High performance trench technology ESD Protected AM2321PE PRODUCT SUMMARY VDS (V) rDS(on) (OHM) -20 0.
079 @ VGS = -4.
5V 0.
110 @ VGS = -2.
5V ID (A) -4.
1 -3.
2 G S D ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM -20 V ±8 -4.
1 -3.
3 A -10 Continuous Source Current (Diode Conduction)a IS ±0.
46 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 1.
25 0.
8 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol RTHJA Maximum 100 150 Units oC/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM2321PE_A Analog Power AM2321PE SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Pulsed Body-Diode CurrentC Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD ISM Qg Qgs Qgd td(on) tr td(off) tf VDS = VGS, ID = -250 uA VDS = 0 V, VGS...


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