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AM2320NE

Analog Power
Part Number AM2320NE
Manufacturer Analog Power
Description N-Channel MOSFET
Published Oct 8, 2016
Detailed Description Analog Power N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast sw...
Datasheet PDF File AM2320NE PDF File

AM2320NE
AM2320NE


Overview
Analog Power N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM2320NE VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 18 @ VGS = 4.
5V 21 @ VGS = 2.
5V ID(A) 7.
0 6.
5 SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 7.
0 5.
5 20 1.
9 Power Dissipation a TA=25°C TA=70°C PD 1.
3 0.
8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 100 166 Units °C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM2320NE_1A Analog Power AM2320NE Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 4.
5 V, ID = 5.
6 A VGS = 2.
5 V, ID = 4.
5 A VDS = 15 V, ID = 5.
6 A IS = 1 A, VGS = 0 V Dynamic VDS = 10 V, VGS = 4.
5 V, ID = 5.
6 A VDS = 10 V, RL = 1.
8 Ω, ID = 5.
6 A, VGEN = 4.
5 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 MHz Min Typ Max Unit 1V ±10 uA 1 ...



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