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AMD533CE

Analog Power
Part Number AMD533CE
Manufacturer Analog Power
Description N & P-Channel MOSFET
Published Oct 9, 2016
Detailed Description Analog Power AMD533CE P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell densi...
Datasheet PDF File AMD533CE PDF File

AMD533CE
AMD533CE

Overview
Analog Power AMD533CE P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 45 @VGS = 4.
5V 35 @VGS =10V -30 70 @VGS =-4.
5V 52 @VGS = -10V ID (A) 29 36 -20 -26 • Low rDS(on) provides higher efficiency and extends battery life D1 S 2 • Low thermal impedance copper leadframe DPAK saves board space G 1 G 2 • Fast switching speed • High performance trench technology S1 G1 D S2 G2 S 1 N-Channel MOSFET D2 P-Channel MOSFET ESD Protected 2000V ABSOLUTE MAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISENOTED) Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 30 ±20 -30 ±20 V 36 -26 30 -21 A 40 -40 Continuous Source Current (Diode Conduction)a IS 30 -30 A Power Dissipationa TA=25oC PD Operating Junction and Storage Temperature Range TJ, Tstg 50 50 -55 to 175 W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.
0 Units oC/W oC/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AMD533CE_D Analog Power AMD533CE SPECIFICATIONS (TA = 25oCUNLESS OTHERWISENOTED) Parameter Symbol Test Conditions Limits Ch Min Typ Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Tranconductancea Dynamic VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = VDS, ID = 250 uA VGS = VDS, ID = -250 uA VGS = -20 V, VDS = 0 V VGS = 20 V, VDS = 0 ...


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