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RTH35003-20D

RFHIC
Part Number RTH35003-20D
Manufacturer RFHIC
Description GaN Doherty Hybrid Amplifier
Published Oct 11, 2016
Detailed Description GaN Doherty Hybrid Amplifier RTH35003-20D Product Features • GaN on SiC Chip on Board • Surface Mount Hybrid Type • 2-S...
Datasheet PDF File RTH35003-20D PDF File

RTH35003-20D
RTH35003-20D

Overview
GaN Doherty Hybrid Amplifier RTH35003-20D Product Features • GaN on SiC Chip on Board • Surface Mount Hybrid Type • 2-Stage Doherty Amplifier • High Efficiency • No Matching circuit needed Applications • RF Sub-Systems • Base Station • RRH •4G/ LTE system • Small cell Description Package Type : SP-1E Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH35003-20D amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process.
Electrical Specifications @ Vds=30V, Ta=25℃ PARAMETER Frequency Range Power Gain Gain Flatness Input Return Loss Pout @ Average UNIT MHz dB dBm MIN 3520 21 -1.
5 - TYP 3540 24 -14 35.
1 MAX 3560 +1.
5 -9 - Pout @ Saturation dBm 42.
6 43.
5 - ACLR @ BW 20MHz 2FA LTE (PAPR 7.
5dB) dBc - -29 -25 -53 - Doherty Efficiency Total Efficiency % 35 46 38 - Drive Amp.
Idq - 40 - Carrier Amp.
Idq mA - 110 - Peaking Amp.
Idq -0- -4.
9 -2.
8 -2.
0 -4.
9 -2.
8 -2.
0 Supply Voltage ...


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