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GS81302TT11GE

GSI Technology
Part Number GS81302TT11GE
Manufacturer GSI Technology
Description 144Mb SigmaDDR-II+ Burst of 2 SRAM
Published Oct 13, 2016
Detailed Description GS81302TT06/11/20/38E-500/450/400/350 165-Bump BGA Commercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRA...
Datasheet PDF File GS81302TT11GE PDF File

GS81302TT11GE
GS81302TT11GE

Overview
GS81302TT06/11/20/38E-500/450/400/350 165-Bump BGA Commercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 500 MHz–350 MHz 1.
8 V VDD 1.
8 V or 1.
5 V I/O Features • 2.
5 Clock Latency • Simultaneous Read and Write SigmaDDRTM Interface • JEDEC-standard pinout and package • Double Data Rate interface • Byte Write controls sampled at data-in time • Burst of 2 Read and Write • Dual-Range On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs • 1.
8 V +100/–100 mV core power supply • 1.
5 V or 1.
8 V HSTL Interface • Pipelined read operation • Fully coherent read and write pipelines • ZQ pin for programmable output drive strength • Data Valid Pin (QVLD) Support • IEEE 1149.
1 JTAG-compliant Boundary Scan • 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package • RoHS-compliant 165-bump BGA package available SigmaDDR-II™ Family Overview The GS81302TT06/11/20/38E are built in compliance with the SigmaDDR-II+ SRAM pinout sta...


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