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GS81313LQ18GK

GSI Technology
Part Number GS81313LQ18GK
Manufacturer GSI Technology
Description 144Mb SigmaQuad-IIIe Burst of 2 ECCRAM
Published Oct 13, 2016
Detailed Description GS81313LQ18/36GK-800/714/600 260-Pin BGA Com & Ind Temp HSTL I/O 144Mb SigmaQuad-IIIe™ Burst of 2 ECCRAM™ Up to 800 M...
Datasheet PDF File GS81313LQ18GK PDF File

GS81313LQ18GK
GS81313LQ18GK

Overview
GS81313LQ18/36GK-800/714/600 260-Pin BGA Com & Ind Temp HSTL I/O 144Mb SigmaQuad-IIIe™ Burst of 2 ECCRAM™ Up to 800 MHz 1.
25V ~ 1.
3V VDD 1.
2V ~ 1.
3V VDDQ Features • 4Mb x 36 and 8Mb x 18 organizations available • 800 MHz maximum operating frequency • 1.
6 BT/s peak transaction rate (in billions per second) • 115 Gb/s peak data bandwidth (in x36 devices) • Separate I/O DDR Data Buses • Non-multiplexed DDR Address Bus • Two operations - Read and Write - per clock cycle • Burst of 2 Read and Write operations • 3 cycle Read Latency • On-chip ECC with virtually zero SER • 1.
25V ~ 1.
3V core voltage • 1.
2V ~ 1.
3V HSTL I/O interface • Configurable ODT (on-die termination) • ZQ pin for programmable driver impedance • ZT pin for programmable ODT impedance • IEEE 1149.
1 JTAG-compliant Boundary Scan • 260-pin, 14 mm x 22 mm, 1 mm ball pitch, 6/6 RoHS- compliant BGA package SigmaQuad-IIIe™ Family Overview SigmaQuad-IIIe ECCRAMs are the Separate I/O half of the SigmaQuad-IIIe/SigmaDDR-IIIe famil...


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