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GS81314LT37GK

Part Number	GS81314LT37GK
Manufacturer	GSI Technology
Description	144Mb SigmaDDR-IVe Burst of 2 Single-Bank ECCRAM
Published	Oct 13, 2016
Detailed Description	GS81314LT19/37GK-933/800 260-Pin BGA Com & Ind Temp HSTL I/O 144Mb SigmaDDR-IVe™ Burst of 2 Single-Bank ECCRAM™ Up to...
Datasheet	GS81314LT37GK PDF File

Overview

GS81314LT19/37GK-933/800 260-Pin BGA Com & Ind Temp HSTL I/O 144Mb SigmaDDR-IVe™ Burst of 2 Single-Bank ECCRAM™ Up to 933 MHz 1.
2V ~ 1.
3V VDD 1.
2V ~ 1.
3V VDDQ Features • 4Mb x 36 and 8Mb x 18 organizations available • Organized as a single logical memory bank • 933 MHz maximum operating frequency • 933 MT/s peak transaction rate (in millions per second) • 67 Gb/s peak data bandwidth (in x36 devices) • Common I/O DDR Data Bus • Non-multiplexed SDR Address Bus • One operation - Read or Write - per clock cycle • No address/bank restrictions on Read and Write ops • Burst of 2 Read and Write operations • 5 cycle Read Latency • On-chip ECC with virtually zero SER • Loopback signal timing train...

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GS81314LT37GK 144Mb SigmaDDR-IVe Burst of 2 Single-Bank ECCRAM - GSI Technology

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