DatasheetsPDF.com

GS4288C09GL

Part Number	GS4288C09GL
Manufacturer	GSI Technology
Description	288Mb CIO Low Latency DRAM
Published	Oct 14, 2016
Detailed Description	GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (...
Datasheet	GS4288C09GL PDF File

Overview

GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II 533 MHz–300 MHz 2.
5 V VEXT 1.
8 V VDD 1.
5 V or 1.
8 V VDDQ Features • Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.
067Gb/s/pin data rate) • 38.
4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • 8M x 36, 16M x 18, and 32M x 9 organizations available • 8 internal banks for concurrent operation and maximum bandwidth • Reduced cycle time (15 ns at 533 MHz) • Address Multiplexing (Nonmultiplexed address option available) • SRAM-type interface • Programmable Read Latency (RL), row cycle time, and burst sequence length • Balanced Read and Write Latencies in order to optimize data bus utilization • Data mask for Write commands • Differential input clocks (CK, CK) • Differential input data clocks (DKx, DKx) • On-chip DLL generates CK edge-aligned data and output data clock signals • Data vali...

Similar Datasheet

GS4288C09GL 288Mb CIO Low Latency DRAM - GSI Technology
GS4288C09L 288Mb CIO Low Latency DRAM - GSI Technology

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)