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GS4576C36GL

Part Number	GS4576C36GL
Manufacturer	GSI Technology
Description	576Mb CIO Low Latency DRAM
Published	Oct 14, 2016
Detailed Description	GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM ...
Datasheet	GS4576C36GL PDF File

Overview

GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II) 533 MHz–300 MHz 2.
5 V VEXT 1.
8 V VDD 1.
5 V or 1.
8 V VDDQ Features • Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.
067Gb/s/pin data rate) • 38.
4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • 16M x 36, 32M x 18, and 64M x 9 organizations available • 8 banks • Reduced cycle time (15 ns at 533 MHz) • Address Multiplexing (Nonmultiplexed address option available) • SRAM-type interface • Programmable Read Latency (RL), row cycle time, and burst sequence length • Balanced Read and Write Latencies in order to optimize data bus utilization • Data mask for Write commands • Differential input clocks (CK, CK) • Differential input data clocks (DKx, DKx) • On-chip DLL generates CK edge-aligned data and output data clock signals • Data valid signal (QVLD) • 32 ms refresh (16K refresh for eac...

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