DatasheetsPDF.com

GS832118GE-V

GSI Technology
Part Number GS832118GE-V
Manufacturer GSI Technology
Description 36Mb Sync Burst SRAMs
Published Oct 14, 2016
Detailed Description GS832118/32/36E-xxxV Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1.8 V or 2.5 V V...
Datasheet PDF File GS832118GE-V PDF File

GS832118GE-V
GS832118GE-V

Overview
GS832118/32/36E-xxxV Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1.
8 V or 2.
5 V VDD 1.
8 V or 2.
5 V I/O Features • IEEE 1149.
1 JTAG-compatible Boundary Scan • 1.
8 V or 2.
5 V core power supply • 1.
8 V or 2.
5 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 165-bump FP-BGA package • RoHS-compliant 165-bump BGA package available Functional Description Applications The GS832118/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
C...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)