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GS8672T20BGE

GSI Technology
Part Number GS8672T20BGE
Manufacturer GSI Technology
Description 72Mb SigmaDDR-II+ Burst of 2 ECCRAM
Published Oct 14, 2016
Detailed Description GS8672T20/38BE-633/550/500/450/400 165-Bump BGA Commercial Temp Industrial Temp 72Mb SigmaDDR-II+TM Burst of 2 ECCRAMT...
Datasheet PDF File GS8672T20BGE PDF File

GS8672T20BGE
GS8672T20BGE

Overview
GS8672T20/38BE-633/550/500/450/400 165-Bump BGA Commercial Temp Industrial Temp 72Mb SigmaDDR-II+TM Burst of 2 ECCRAMTM 633 MHz–400 MHz 1.
8 V VDD 1.
5 V I/O Features • 2.
5 Clock Latency • On-Chip ECC with virtually zero SER • Simultaneous Read and Write SigmaDDR™ Interface • Common I/O bus • JEDEC-standard package • Double Data Rate interface • Byte Write capability • Burst of 2 Read and Write • On-Die Termination (ODT) on Data (DQ), Byte Write (BW), and Clock (K, K) outputs • 1.
8 V +100/–100 mV core power supply • 1.
5 V HSTL Interface • Pipelined read operation with self-timed Late Write • Fully coherent read and write pipelines • ZQ pin for programmable output drive strength • IEEE 1149.
1 JTAG-compliant Boundary Scan • Pin-compatible with 36Mb and 144Mb devices • 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package • RoHS-compliant 165-bump BGA package available SigmaDDR™ ECCRAM Overview The GS8672T20/38BE SigmaDDR-II+ ECCRAMs are built ...


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