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2SA1225

Part Number	2SA1225
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Transistor
Published	Oct 17, 2016
Detailed Description	isc Silicon PNP Power Transistor 2SA1225 DESCRIPTION ·High transition frequency ·100% avalanche tested ·Minimum Lot-to...
Datasheet	2SA1225 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1225 DESCRIPTION ·High transition frequency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC2983 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.
5 A PC Total Power Dissipation @ TC=25℃ 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered...

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