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2SA1261-Z

Inchange Semiconductor
Part Number 2SA1261-Z
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Oct 17, 2016
Detailed Description isc Silicon PNP Power Transistor 2SA1261-Z DESCRIPTION ·High switching speed ·Low Collector-Emitter Saturation Voltage...
Datasheet PDF File 2SA1261-Z PDF File

2SA1261-Z
2SA1261-Z

Overview
isc Silicon PNP Power Transistor 2SA1261-Z DESCRIPTION ·High switching speed ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.
6V(Max)@ IC= -5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC3157 APPLICATIONS ·High speed high voltage switching industrial use ·DC/DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.
5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1261-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VC...


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