DatasheetsPDF.com

MJD6039

Part Number	MJD6039
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Oct 17, 2016
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·H...
Datasheet	MJD6039 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High DC Current Gain- : hFE = 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current Collector Power Dssipation TC=25℃ PC Collector Power Dissipation Ta=25℃ TJ Junction Temperature ...

Similar Datasheet

MJD6036 Silicon power Transistor - Motorola
MJD6039 SILICON POWER TRANSISTORS - Motorola
MJD6039 Darlington Power Transistors - ON Semiconductor
MJD6039 Silicon NPN Power Transistor - Inchange Semiconductor
MJD6039T4G Darlington Power Transistors - ON Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)