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CJ1012

ZPSEMI
Part Number CJ1012
Manufacturer ZPSEMI
Description N-Channel Power MOSFET
Published Oct 18, 2016
Detailed Description CJ1012 SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET General Description This Single N-Channel MO...
Datasheet PDF File CJ1012 PDF File

CJ1012
CJ1012

Overview
CJ1012 SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET General Description This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON).
FEATURE  High-Side Switching  Low On-Resistance  Low Threshold  Fast Switching Speed  ESD protected up to 2KV SOT-523 1.
GATE 2.
SOURCE 3.
DRAIN APPLICATIONS  Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2 , Ta=25℃) Maximum Power Dissipation (note 3 , Tc=25℃) Thermal Resistance from Junction to Ambient Thermal Resistance from Junction to Case Storage Temperature Junction Temperature Symbol VDSS VGS ID(DC) IDM(pulse) PD RθJA RθJC Tj Tstg Value 20 ±12 500 10...


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