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TIP35CP Datasheet PDF


Part Number TIP35CP
Manufacturer STMicroelectronics
Title Complementary power transistors
Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coup...
Features
■ Low collector-emitter saturation voltage
■ Complementary NPN-PNP transistors Applications
■ General purpose
■ Audio amplifier Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very ...

File Size 174.58KB
Datasheet TIP35CP PDF File








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TIP35C : SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 Φ3.2±0,1 TO-3P(B) FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.) - TIP35,TIP36 = 60Vdc (Min.) - TIP35A,TIP36A = 80Vdc (Min.) - TIP35B, TIP36B = 100Vdc (Min.) - TIP35C, TIP36C DC Current .

TIP35C : TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B1 C2 E3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case tempera.

TIP35C : The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. . 3 2 1 TO-247 Figure 1. Internal schematic diagrams Table 1. Device summary Order code TIP35C TIP36C Marking TIP35C TIP36C Package TO-247 September 2008 Rev 5 Packaging Tube 1/9 www.st.com 9 Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter VCBO VCEO VEBO IC ICM IB Ptot Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP 5 ms) Base current Total dissipation .

TIP35C : TO-3P NPN 。Silicon NPN transistor in a TO-3P Plastic Package.  / Features ,, TIP36C 。 Low leakage current, high current gain bandwidth product, Complementary to TIP36C. / Applications 。 Power amplifier and switching applications. / Equivalent Circuit / Pinning PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 TIP35C Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Peak Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperatur.

TIP35C : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP35A/D Complementary Silicon High-Power Transistors for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain — hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ.

TIP35C : TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz • These are Pb−Free Devices* MAXIMUM RATINGS Rating TIP35A TIP35B TIP35C Symbol TIP36A TIP36B TIP36C Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous − Peak (Note 1) VCEO VCB VEB IC 60 60 80 100 Vdc 80 100 Vdc 5.0 Vdc Adc 25 40 Base Current .

TIP35C : SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. Complementary to TIP36C. Icmax:25A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 100 100 5 25 5.0 125 150 -55 150 UNIT V V V A A W E TIP35C TRIPLE DIFFUSED NPN TRANSISTOR AQ B K F I J GH C D d PP L T 1 23 1. BASE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS A 15.9 MAX B 4.8 MAX C 20.0+_ 0.3 D 2.0+_ 0.3 d 1.0+0.3/-0.25 E 2..

TIP35C : ·With TO-3PN package www.datasheet4u.com ·Complement to type TIP36/36A/36B/36C ·DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP35/35A/35B/35C Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS (TC= ) SYMBOL PARAMETER TIP35 VCBO Collector-base voltage TIP35A TIP35B TIP35C TIP35 VCEO Collector-emitter voltage TIP35A TIP35B TIP35C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open c.

TIP35C : SEMICONDUCTORS NPN TIP35-A-B-C SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. PNP complements are TIP36-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings TIP35 TIP35A TIP35B TIP35C TIP35 TIP35A TIP35B TIP35C TIP35 TIP35A TIP35B TIP35C TIP35 TIP35A TIP35B TIP35C TIP35 TIP35A TIP35B TIP35C Value 40 60 80 100 40 60 80 100 Unit VCBO Collector-Base Voltage http://www.DataSheet4U.net/ V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage 5 V IC Collector Current 25 A ICM Collector Peak Current 40 A 04/10/2012 COMSET SEMICONDUCT.

TIP35C : ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type TIP36C ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 25 A ICM Collector Current-peak 40 A IB Base Current 5 A PC Collector Power Dissipation@ TC=25℃ 125 W .

TIP35C : TIP35A, TIP35B, TIP35C Silicon NPN Transistors Power Amp, Switch TO−247 Type Package Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth Product: |hfe| = 3 (Min) @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector−Base Voltage, VCB TIP35A 60V TIP35B 80V TIP35C . ..

TIP35C : The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C.  INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3)  ORDERING INFORMATION Order Number Lead Free Halogen Free TIP35CL-x-T3P-T TIP35CG-x-T3P-T TIP35CL-x-T3N-T TIP35CG-x-T3N-T Package TO-3P TO-3PN Pin Assignment 123 BCE BCE Packing Tube Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 4 QW-R214-013.C TIP35C NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) VCBO VCEO 100 V 100 V Emitter-Base Voltage (IC.

TIP35C : The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications. MARKING: FULL PART NUMBER TO-218 TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TIP35 SYMBOL TIP36 VCBO 40 VCEO 40 VEBO IC ICM IB PD TJ, Tstg ΘJC TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C 60 80 100 60 80 100 5.0 25 40 5.0 125 -65 to +150 1.0 UNITS V V V A A A W .

TIP35C : TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO(sus) = 100V (Minimum) - TIP35C, TIP36C • DC Current Gain hFE = 25 (Minimum) at IC = 1.5A. • Current Gain-Bandwidth Product fT = 3.0MHz (Minimum) at IC = 1.0A. Pin 1. Base 2. Collector 3. Emitter Maximum Ratings Dimensions A B C D E F G H I J K L M N O P Minimum Maximum 20.63 22.38 15.38 16.20 1.90 2.70 5.10 6.10 14.81 15.22 11.72 12.84 4.20 4.50 1.82 2.46 2.92 3.23 0.89 1.53 5.26 5.66 18.50 21.50 4.68 5.36 2.40 2.80 3.25 3.65 0.55 0.70 Dimensions : Millimetres NPN PNP TIP35C TIP36C 25 Amp.

TIP35CA : SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. Icmax:25A. D E A N O TIP35CA TRIPLE DIFFUSED NPN TRANSISTOR Q B K F H Complementary to TIP36CA. MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 25 5.0 125 150 -55 150 UNIT d M P P T V V V 1. BASE 1 2 3 DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 C 19.90 + _ 0.20 D 2.00 + _ 0.20 d 1.00 + _ 0.20 E 3.00 + _ 0.20 3.80 + F _ 0.20 G 3.50 + _ 0.20 H 13.90 + _ 0.

TIP35CF : ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type TIP36CF ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 25 A ICM Collector Current-peak 40 A IB Base Current PC Collector Power Dissipation @ TC=25℃ Tj Juncti.

TIP35CF : Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Continuous Collector Power Dissipation at Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM IB PC Tj, Tstg TIP35F TIP36F 40 40 TIP35AF TIP35BF TIP36AF TIP36BF 60 80 60 80 5.0 25 40 5.0 125 - 65 to +150 TIP35CF TIP36CF 100 100 THERMAL CHARACTERISTICS Thermal Resistance, Junction to Case Rth (j-c) 1.0 ELECTRICAL CHARACTERISTICS (Tj=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage *VCEO (sus) IC=30mA, IB=0 TIP35F/TIP36F TIP35AF/TIP36AF TIP35BF/TIP36B.




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