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2N6283


Part Number 2N6283
Manufacturer Aeroflex
Title NPN Darlington Power Silicon Transistor
Description NPN Darlington Power Silicon Transistor 2N6283 & 2N6284 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/504 • TO-3 (TO-204AA) Pac...
Features
• Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/504
• TO-3 (TO-204AA) Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +25 °C (1) @ TA = +100 °C Operating & Storage Tempe...

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2N6280 : 2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications. • High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279 = 140 Vdc (Min) - 2N6280 = 150 Vdc (Min) - 2N6281 • High DC Current Gain hFE = 30-120@ IC = 20 Adc = 10 (Min) @ IC = 50 Adc • Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC = 20 Adc tr = 0.351ls (Max) ts = 0.8 Ils (Max) tf = 0.25 Ils (Max) 'MAXIMUM RATINGS Rating Svmbol Collector-Base Voltage VeB Collector-Emitter Voltage VeEO Emitter-Base Voltage VEB Collector Cu.

2N6280 : ·Collector-Emitter Breakdown Voltage- : VCEO=140V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 A 250 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6280 isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6280 ELECTRICAL CHARACTERISTICS TC=.

2N6280 : .

2N6280 : 40 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) 2N5968 2N6033 40 40 mVCaExO (V) 100 120 Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 30 120 Note 1 1.2 Note 1 Note 1 220 TO-63 10 50 Note 1 1 Note 1 Note 1 140 TO-3 40 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) 2N5969 40 mVCaExO (V) 100 Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 30 120 Note 1 1.8 Note 1 Note 1 220 TO-63 50 AMP NPN Sorted by IC, then VCEO Part Number .

2N6281 : 2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications. • High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279 = 140 Vdc (Min) - 2N6280 = 150 Vdc (Min) - 2N6281 • High DC Current Gain hFE = 30-120@ IC = 20 Adc = 10 (Min) @ IC = 50 Adc • Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC = 20 Adc tr = 0.351ls (Max) ts = 0.8 Ils (Max) tf = 0.25 Ils (Max) 'MAXIMUM RATINGS Rating Svmbol Collector-Base Voltage VeB Collector-Emitter Voltage VeEO Emitter-Base Voltage VEB Collector Cu.

2N6281 : ·Collector-Emitter Breakdown Voltage- : VCEO=150V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 A 250 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6281 isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6281 ELECTRICAL CHARACTERISTICS TC=.

2N6281 : .

2N6281 : 40 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) 2N5968 2N6033 40 40 mVCaExO (V) 100 120 Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 30 120 Note 1 1.2 Note 1 Note 1 220 TO-63 10 50 Note 1 1 Note 1 Note 1 140 TO-3 40 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) 2N5969 40 mVCaExO (V) 100 Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 30 120 Note 1 1.8 Note 1 Note 1 220 TO-63 50 AMP NPN Sorted by IC, then VCEO Part Number .

2N6282 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6282/D Darlington Complementary Silicon Power Transistors designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc (Min) — 2N6282, 2N6285 VCEO(sus) = 80 Vdc (Min) — 2N6283, 2N6286 VCEO(sus) = 100 Vdc (Min) — 2N6284, 2N6287 • Monolithic Construction with Built–In Base–Emitter Shunt Resistors *MAXIMUM RATINGS Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

2N6282 : ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 10 Adc ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Complement to type 2N6285 APPLICATIONS ·Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current -Continuous 20 A ICP Collector Current-Peak 40 A IB Base Current 0.5 A PC Collector Power Dissipation@TC=25℃ 160 W Tj Junction Temperature -65~200 ℃ Tstg Stor.

2N6282 : www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6282/D Darlington Complementary Silicon Power Transistors designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc (Min) — 2N6282, 2N6285 VCEO(sus) = 80 Vdc (Min) — 2N6283, 2N6286 VCEO(sus) = 100 Vdc (Min) — 2N6284, 2N6287 • Monolithic Construction with Built–In Base–Emitter Shunt Resistors *MAXIMUM RATINGS Rating 2N6282 thru 2N6284 * 2N6285 thru 2N6287 * PNP NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ.

2N6282 : ·With TO-3 package ·Complement to type 2N6285/6286/6287 ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6282 2N6283 2N6284 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6282 VCBO Collector-base voltage 2N6283 2N6284 2N6282 VCEO Collector-emitter voltage 2N6283 2N6284 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base www.DataSheet.net/ CONDITIONS VALUE 60 80 100 60 8.

2N6282 : 2N6282 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 20A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) www.DataSheet.net/ PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CON.

2N6282 : 2N6282 – 2N6283 – 2N6284 NPN SILICON DARLINGTON POWER TRANSISTOR The 2N6282, 2N6283 and 2N6284 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary PNP are 2N6285, 2N6286, 2N6287 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Ratings Collector-Emitter Voltage (IB=0) 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 Value 60 80 100 60 80 100 5 Unit V VCBO Collector-Base Voltage (IE=0) www.DataSheet.net/ V VEBO Emitter-Base Voltage (IC=0) V .

2N6282 : The CENTRAL SEMICONDUCTOR 2N6282, 2N6285 series devices are complementary silicon monolithic Darlington transistors, manufactured by the epitaxial base process, designed for general purpose high current, high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6282 2N6285 60 60 2N6283 2N6286 80 80 5.0 20 40 0.5 160 -65 to +200 1.09 2N6284 2N6287 100 100 ELECTR.

2N6283 : www.DataSheet4U.com ON Semiconductort NPN Darlington Complementary Silicon Power Transistors designed for general−purpose amplifier and low−frequency switching applications. 2N6283 2N6284 PNP • High DC Current Gain @ IC = 10 Adc − • • w 2N6286 2N6287 DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS 160 WATTS hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) Monolithic Construction with Built−In Base−Emitter Shunt Resistors ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ .

2N6283 : ·With TO-3 package ·Complement to type 2N6285/6286/6287 ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6282 2N6283 2N6284 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6282 VCBO Collector-base voltage 2N6283 2N6284 2N6282 VCEO Collector-emitter voltage 2N6283 2N6284 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base www.DataSheet.net/ CONDITIONS VALUE 60 80 100 60 8.




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