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MTDA0P10FP

Cystech Electonics
Part Number MTDA0P10FP
Manufacturer Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Published Oct 28, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C733FP Issued Date : 2011.03.14 Revised Date : Page No. : 1/6 P-Channel Logic Le...
Datasheet PDF File MTDA0P10FP PDF File

MTDA0P10FP
MTDA0P10FP

Overview
CYStech Electronics Corp.
Spec.
No.
: C733FP Issued Date : 2011.
03.
14 Revised Date : Page No.
: 1/6 P-Channel Logic Level Enhancement Mode Power MOSFET MTDA0P10FP BVDSS -100V ID -22A Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package RDSON(MAX) 120mΩ Equivalent Circuit MTDA0P10FP Outline TO-220FP G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.
1mH, ID=-15A, RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ VDS VGS ID ID IDM IAS EAS EAR Pd Operating Junction and Storage Temperature Range Note : *1.
Pulse width limited by maximum junction temperature *2.
Duty cycle ≤ 1% Tj, Tstg Limits -100 ±20 -22 -15 -75 -15 22.
5 11.
25 62...


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