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MTDA4N20J3

Part Number	MTDA4N20J3
Manufacturer	Cystech Electonics
Description	N-Channel Enhancement Mode Power MOSFET
Published	Oct 28, 2016
Detailed Description	CYStech Electronics Corp. Spec. No. : C786J3 Issued Date : 2010.12.20 Revised Date : Page No. : 1/7 N -Channel Enhance...
Datasheet	MTDA4N20J3 PDF File

Overview

CYStech Electronics Corp.
Spec.
No.
: C786J3 Issued Date : 2010.
12.
20 Revised Date : Page No.
: 1/7 N -Channel Enhancement Mode Power MOSFET MTDA4N20J3 BVDSS ID 200V 15A RDSON(MAX) 140mΩ Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package Equivalent Circuit MTDA4N20J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=1mH, ID=11A, RG=25Ω Repetitive Avalanche Energy @ L=0.
5mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1.
Pulse width limited by maximum junction temperature *2.
Duty cycle ≤ 1% Symbol VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg MTDA4N20J3 Limits 200 ±30 15 10.
5 60 11 60.
5 30.
2 69 26...

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MTDA4N20J3 N-Channel Enhancement Mode Power MOSFET - Cystech Electonics

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