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CEE02N6G

Part Number	CEE02N6G
Manufacturer	CET
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Oct 28, 2016
Detailed Description	CEE02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high ...
Datasheet	CEE02N6G PDF File

Overview

CEE02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2.
0A, RDS(ON) = 5.
0Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-126 package.
D G CEE SERIES TO-126 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 600 ±30 2 8 56 0.
44 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal...

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