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MSC0205W

MORESEMI
Part Number MSC0205W
Manufacturer MORESEMI
Description Dual N-Channel MOSFET
Published Oct 29, 2016
Detailed Description MSC0205W 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ V...
Datasheet PDF File MSC0205W PDF File

MSC0205W
MSC0205W

Overview
MSC0205W 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.
5V RDS(ON) < 37mΩ @ VGS=2.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Marking and pin Assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0205W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 20 ±10 6 3.
8 25 1.
25 -55 To 150 ...


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