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MSC0211GE

MORESEMI
Part Number MSC0211GE
Manufacturer MORESEMI
Description Dual N-Channel MOSFET
Published Oct 29, 2016
Detailed Description MSC0211GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ ...
Datasheet PDF File MSC0211GE PDF File

MSC0211GE
MSC0211GE

Overview
MSC0211GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.
5V RDS(ON) < 9mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Lead Free Application ● PWM application ● Load switch PIN Configuration Marking and pin assignment TSSOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0211GE MSC0211GE TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±10 11 44 1.
6 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistan...


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