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MSC0311WE

Part Number	MSC0311WE
Manufacturer	MORESEMI
Description	Dual N-Channel MOSFET
Published	Oct 29, 2016
Detailed Description	MSC0311WE 30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID =11A RDS(ON) < 10mΩ @ ...
Datasheet	MSC0311WE PDF File

Overview

MSC0311WE 30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD proteted Application ●PWM application ●Load switch PIN Configuration Lead Free Marking and pin assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0311WE MSC0311WE SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±10 11 50 2.
5 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Juncti...

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MSC0311WE Dual N-Channel MOSFET - MORESEMI

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