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MSC0605W

MORESEMI
Part Number MSC0605W
Manufacturer MORESEMI
Description Dual N-Channel MOSFET
Published Oct 29, 2016
Detailed Description MSC0605W 60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ V...
Datasheet PDF File MSC0605W PDF File

MSC0605W
MSC0605W

Overview
MSC0605W 60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =4.
5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Lead Free PIN Configuration Marking and pin assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0605W MSC0605W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Rang...


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