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MSN0207E

MORESEMI
Part Number MSN0207E
Manufacturer MORESEMI
Description N-Channel MOSFET
Published Oct 29, 2016
Detailed Description MSN0207E 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1...
Datasheet PDF File MSN0207E PDF File

MSN0207E
MSN0207E

Overview
MSN0207E 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =6.
5A RDS(ON) <40mΩ @ VGS=1.
8V RDS(ON) <33mΩ @ VGS=2.
5V RDS(ON) <27mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Application ● PWM application ● Load switch PIN Configuration Lead Free Marking and pin assignment SOT-23 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0207E SOT-23 Reel Size Ø180mm Tape width 8mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 6.
5 30 1.
4 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Re...


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