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MSN014WE

Part Number	MSN014WE
Manufacturer	MORESEMI
Description	N-Channel MOSFET
Published	Oct 29, 2016
Detailed Description	MSN014WE 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5...
Datasheet	MSN014WE PDF File

Overview

MSN014WE 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.
5V RDS(ON) <9 mΩ @ VGS=2.
5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Application ● PWM application ● Load switch PIN Configuration Lead Free Marking and pin Assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0214WE MSN0214WE SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 20 ±10 14 44 3 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient(Not...

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