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MSN0360D

Part Number	MSN0360D
Manufacturer	MORESEMI
Description	N-Channel MOSFET
Published	Oct 29, 2016
Detailed Description	MSN0360D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V...
Datasheet	MSN0360D PDF File

Overview

MSN0360D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply PIN Configuration Marking and pin assignment TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0360D MSN0360D TO-252-2L Reel Size - Tape width - Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum...

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MSN0360D N-Channel MOSFET - MORESEMI

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