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MSN0480D

MORESEMI
Part Number MSN0480D
Manufacturer MORESEMI
Description N-Channel MOSFET
Published Oct 29, 2016
Detailed Description MSN0480D 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10...
Datasheet PDF File MSN0480D PDF File

MSN0480D
MSN0480D

Overview
MSN0480D 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =40V,ID =80A RDS(ON) <6.
6mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Lead Free Application ● PWM ● Load Switching PIN Configuration Marking and pin assignment TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0480D MSN0480D TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 5) EAS Operating Junction and Storage Temperature Range TJ,TSTG ...


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