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MSN0603L

MORESEMI
Part Number MSN0603L
Manufacturer MORESEMI
Description N-Channel MOSFET
Published Oct 29, 2016
Detailed Description MSN0603L 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V ...
Datasheet PDF File MSN0603L PDF File

MSN0603L
MSN0603L

Overview
MSN0603L 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Battery switch ●DC/DC converter PIN Configuration Lead Free Marking and Pin Assignment D G SOT-23 -3L Top View S Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0603L SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 60 ±20 3 10 1.
7 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 73.
5 ℃/W...


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