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MSN10B0K

MORESEMI
Part Number MSN10B0K
Manufacturer MORESEMI
Description N-Channel MOSFET
Published Oct 29, 2016
Detailed Description MSN10B0K 100V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS...
Datasheet PDF File MSN10B0K PDF File

MSN10B0K
MSN10B0K

Overview
MSN10B0K 100V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.
9mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Lead Free Marking and pin assignment TO-220-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN10B0K MSN10B0K TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous ID (100℃) Drain Current-Continuous(TC=100℃) IDM Pulsed Drain ...


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