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G4PF50WD

International Rectifier
Part Number G4PF50WD
Manufacturer International Rectifier
Description IRG4PF50WD
Published Oct 29, 2016
Detailed Description PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for us...
Datasheet PDF File G4PF50WD PDF File

G4PF50WD
G4PF50WD

Overview
PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter G • Low IGBT conduction losses • Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz • HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and switching losses Absolute Maximum Ratings C E n-channel VCES = 900V VCE(on) typ.
= 2.
25V @VGE = 15V, IC = 28A TO-247AC ...


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