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ACE5212A

ACE Technology
Part Number ACE5212A
Manufacturer ACE Technology
Description N-Channel MOSFET
Published Nov 2, 2016
Detailed Description ACE5212A N-Channel Enhancement Mode MOSFET Description The ACE5212A is the N-Channel enhancement mode power field effect...
Datasheet PDF File ACE5212A PDF File

ACE5212A
ACE5212A

Overview
ACE5212A N-Channel Enhancement Mode MOSFET Description The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
Features • 20V/0.
65A, RDS(ON)=380mΩ@VGS=4.
5V • 20V/0.
55A,RDS(ON)=450mΩ@VGS=2.
5V • 20V/0.
45A, RDS(ON) =800mΩ@VGS=1.
8V • Super high density cell ...


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