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AS4C512M16D3L

Alliance Semiconductor
Part Number AS4C512M16D3L
Manufacturer Alliance Semiconductor
Description DDR3L SDRAM
Published Nov 2, 2016
Detailed Description 8Gb: x4, x8, x16 DDR3L SDRAM Description Revision History 8Gb: x4, x8, x16 DDR3L SDRAM AS4C2GM4D3L– 256 Meg x 4 x 8 ban...
Datasheet PDF File AS4C512M16D3L PDF File

AS4C512M16D3L
AS4C512M16D3L

Overview
8Gb: x4, x8, x16 DDR3L SDRAM Description Revision History 8Gb: x4, x8, x16 DDR3L SDRAM AS4C2GM4D3L– 256 Meg x 4 x 8 banks* AS4C1G8MD3L– 128 Meg x 8 x 8 banks AS4C512M16D3L – 64 Meg x 16 x 8 banks Revision Rev 1.
0 Rev 2.
0 Details Preliminary datasheet Amend Table 1 noted.
* not released yet Date February 2016 June 2016 Alliance Memory Inc.
551 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc.
reserves the right to change products or specification without notice.
0 8Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM AS4C2GM4D3L– 256 Meg x 4 x 8 banks* AS4C1G8MD3L– 128 Meg x 8 x 8 banks AS4C512M16D3L – 64 Meg x 16 x 8 banks Features • VDD = VDDQ = 1.
35V (1.
283–1.
45V) • Backward compatible to VDD = VDDQ = 1.
5V ±0.
075V – Supports DDR3L devices to be backward compatible in 1.
5V applications • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic...


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