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AS4C256M16D3B-12BCN

Part Number	AS4C256M16D3B-12BCN
Manufacturer	Alliance Semiconductor
Description	Double-data-rate architecture
Published	Nov 2, 2016
Detailed Description	AS4C256M16D3B-12BCN Revision History 4Gb AS4C256M16D3B - 12BCN 96 ball FBGA PACKAGE Revision Details Rev 1.0 Preliminar...
Datasheet	AS4C256M16D3B-12BCN PDF File

Overview

AS4C256M16D3B-12BCN Revision History 4Gb AS4C256M16D3B - 12BCN 96 ball FBGA PACKAGE Revision Details Rev 1.
0 Preliminary datasheet Date Apr.
2016 Alliance Memory Inc.
511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc.
reserves the right to change products or specification without notice Confidential - 1/41 - Rev.
1.
0 April 2016 AS4C256M16D3B-12BCN Specifications - Density : 4G bits - Organization : 32M words x 16 bits x 8 banks - Package : - 96-ball FBGA - Lead-free (RoHS compliant) and Halogen-free - Power supply : VDD, VDDQ = 1.
5V ± 0.
075V - Data rate : - 1600Mbps - 2KB page size - Row address: A0 to A14 - Column address: A0 to A9 - Eight internal banks for concurrent operation - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) - Burst type (BT) : - Sequential (8, 4 with BC) - Interleave (8, 4 with BC) - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11 - CAS Write Latency (CWL) : 5, 6, 7, 8 - Precharge : auto precharge option for each b...

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AS4C256M16D3B-12BCN Double-data-rate architecture - Alliance Semiconductor

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