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HBR20200CT

Inchange Semiconductor
Part Number HBR20200CT
Manufacturer Inchange Semiconductor
Description Schottky Barrier Rectifier
Published Nov 6, 2016
Detailed Description Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss,high Efficiency ·High Operating Junction T...
Datasheet PDF File HBR20200CT PDF File

HBR20200CT
HBR20200CT

Overview
Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss,high Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection，High reliability ·100% avalanche tested ·RoHS product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor HBR20200CT APPLICATIONS ·High Frequency switch power Supply ·Free wheeling diodes and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) IFSM Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current (Per Leg) (Total) Nonrepetitive Peak Surge Current 8.
3ms single half sine-wave superimposed on rated load conditions 200 10 20 190 V A A TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor HBR20...


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