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MBR10L60CT

Inchange Semiconductor
Part Number MBR10L60CT
Manufacturer Inchange Semiconductor
Description Schottky Barrier Rectifier
Published Nov 6, 2016
Detailed Description Schottky Barrier Rectifier INCHANGE Semiconductor MBR10L60CT FEATURES ·Low Forward Voltage ·Low Power Loss/High Effici...
Datasheet PDF File MBR10L60CT PDF File

MBR10L60CT
MBR10L60CT

Overview
Schottky Barrier Rectifier INCHANGE Semiconductor MBR10L60CT FEATURES ·Low Forward Voltage ·Low Power Loss/High Efficiency ·High surge capability ·Guard -Ring for Stress Protection ·Pb-Free Packages are Available ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Supply-output Rectification ·Power Management ·Instrumentation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) Average Rectified Forward Current (Rated VR) TC= 140℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 60 5 10 200 V A A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR...


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