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MBR20H150CT

Inchange Semiconductor
Part Number MBR20H150CT
Manufacturer Inchange Semiconductor
Description Schottky Barrier Rectifier
Published Nov 6, 2016
Detailed Description Schottky Barrier Rectifier INCHANGE Semiconductor MBR20H150CT FEATURES ·Dual rectifier construction，positive center ta...
Datasheet PDF File MBR20H150CT PDF File

MBR20H150CT
MBR20H150CT

Overview
Schottky Barrier Rectifier INCHANGE Semiconductor MBR20H150CT FEATURES ·Dual rectifier construction，positive center tap ·Low Power Loss,High Efficiency ·Guard ring for overvoltage protection ·Metal of silicon rectifier, majonty carrier conduction ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high frequency inverters,free wheeling and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) IFSM IRRM TJ Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current 8.
3ms single half sine-wave superimposed on rated load conditions Peak Repetitive Reverse Surge Current (2μs, 1.
0kHz) Junction Temperature 150 10 200 1.
0 175 V A A A ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website：www.
iscsemi...


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