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CY7C1303BV25

Cypress Semiconductor
Part Number CY7C1303BV25
Manufacturer Cypress Semiconductor
Description 18-Mbit Burst of Two-Pipelined SRAM
Published Nov 6, 2016
Detailed Description CY7C1303BV25 18-Mbit Burst of Two-Pipelined SRAM with QDR® Architecture 18-Mbit Burst of Two-Pipelined SRAM with QDR® A...
Datasheet PDF File CY7C1303BV25 PDF File

CY7C1303BV25
CY7C1303BV25


Overview
CY7C1303BV25 18-Mbit Burst of Two-Pipelined SRAM with QDR® Architecture 18-Mbit Burst of Two-Pipelined SRAM with QDR® Architecture Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 167 MHz clock for high bandwidth ❐ 2.
5 ns clock-to-valid access time ■ Two word burst on all accesses ■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 333 MHz) at 167 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches.
■ Single multiplexed address input bus latches address inputs for both read and write ports ■ Separate port selects for depth expansion ■ Synchronous internally self-timed writes ■ 2.
5 V core power supply with HSTL inputs and outputs ■ Available in 165-ball FBGA package (13 × 15 × 1.
4 mm) ■ Variable drive HSTL output buffers ■ Expanded HSTL output v...



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