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CY7C1323BV25

Part Number	CY7C1323BV25
Manufacturer	Cypress Semiconductor
Description	18-Mbit 4-Word Burst SRAM
Published	Nov 6, 2016
Detailed Description	CY7C1323BV25 18-Mbit 4-Word Burst SRAM with DDR-I Architecture Features Functional Description • 18-Mbit Density (51...
Datasheet	CY7C1323BV25 PDF File

Overview

CY7C1323BV25 18-Mbit 4-Word Burst SRAM with DDR-I Architecture Features Functional Description • 18-Mbit Density (512 Kbit x 36) • 167-MHz Clock for high bandwidth • 4-Word Burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 333 MHz @ 167 MHz) • Two input clocks (K and K) for precise DDR timing – SRAM uses rising edges only • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches.
• Separate Port Selects for depth expansion • Synchronous internally self-timed writes • 2.
5V core power supply with HSTL Inputs and Outputs • Available in 165-ball FBGA package (13 x 15 x 1.
4 mm) • Variable drive HSTL output bu...

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CY7C1323BV25 18-Mbit 4-Word Burst SRAM - Cypress Semiconductor

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