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CY7C1305BV25

Part Number	CY7C1305BV25
Manufacturer	Cypress Semiconductor
Description	18-Mbit Burst of 4 Pipelined SRAM
Published	Nov 6, 2016
Detailed Description	CY7C1305BV25 CY7C1307BV25 18-Mbit Burst of 4 Pipelined SRAM with QDR™ Architecture Features Functional Description •...
Datasheet	CY7C1305BV25 PDF File

Overview

CY7C1305BV25 CY7C1307BV25 18-Mbit Burst of 4 Pipelined SRAM with QDR™ Architecture Features Functional Description • Separate independent Read and Write data ports • Supports concurrent transactions • 167-MHz clock for high bandwidth • 2.
5 ns Clock-to-Valid access time • 4-Word Burst for reducing the address bus frequency • Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 333 MHz) @167 MHz • Two input clocks (K and K) for precise DDR timing • SRAM uses rising edges only • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches.
• Single multiplexed address input bus latches address inputs for both Read and Write ports • Separate Port Selects for depth expansion • Synchronous internally self-timed writes • 2.
5V core power supply with HSTL Inputs and Outputs • Available in 165-ball FBGA package (13 x 15 x 1.
4 mm) • Variable drive HSTL output buffers • Expanded HSTL output voltage...

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